| PART |
Description |
Maker |
| KIC7SZ00FU |
2 Input NAND Gate
SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT(2-INPUT NAND GATE)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KIC7WZ00FK |
SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT(2-INPUT NAND GATE)
|
KEC[KEC(Korea Electronics)]
|
| TC74HC20AP07 TC74HC20AF TC74HC20AFN TC74HC20AP |
CMOS Digital Integrated Circuit Silicon Monolithic Dual 4-Input NAND Gate
|
Toshiba Semiconductor
|
| TC7WH00FC |
CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input NAND Gate
|
Toshiba Semiconductor
|
| TH58NVG1S3AFT TH58NVG1S3AFT05 |
Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| NTE9672 |
Integrated Circuit High Threshold Logic (HTL) Quad, 2-Input NAND Gate
|
NTE Electronics
|
| TC74HC03AP07 TC74HC03AF TC74HC03AFN TC74HC03AP |
CMOS Digital Integrated Circuit Silicon Monolithic Quad 2-Input NAND Gate (open drain)
|
Toshiba Semiconductor
|
| DM54H20J DM54H20J_883 DM54H20J_883B DM54H20J_883C |
Single 8-input NAND Gate 8输入与非
Dual 4-input NAND Gate 4输入与非
CERAMIC CHIP/MIL-PRF-55681 陶瓷芯片/mil-prf-55681
Quad 2-input NAND Gate 输入与非
Dual 4-input NAND Gate 输入与非
Triple 3-input NAND Gate
Dual4-inputNANDGate
|
Cypress Semiconductor, Corp.
Rochester Electronics, LLC
TE Connectivity, Ltd.
|
| KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58D |
Flash - NAND
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TH50VPN564 TH50VPN5640EBSB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
